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| tec magna magnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 2/95 buz900dp buz901dp v dsx drain C source voltage v gss gate C source voltage i d continuous drain current i d(pk) body drain diode p d total power dissipation @ t case = 25c t stg storage temperature range t j maximum operating junction temperature r q jc thermal resistance junction C case 14v 16a 16a 250w C55 to 150c 150c 0.5c/w mechanical data dimensions in mm 123 0.6 2.8 5.0 20.0 5.45 5.45 1.2 2.0 3.4 2.0 1.0 3.3 dia. nCchannel power mosfet features ? high speed switching ? nCchannel power mosfet ? semefab designed and diffused ? high voltage (160v & 200v) ? high energy rating ? enhancement mode ? integral protection diode ? pCchannel also available as buz905dp & buz906dp ? double die package for maximum power and heatsink space toC3pbl pin 1 C gate pin 2 C source pin 3 C drain absolute maximum ratings (t case = 25c unless otherwise stated) power mosfets for audio applications buz900dp 160v buz901dp 200v case is source
tec ma gna ma gnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 2/95 b uz900dp b uz901dp characteristic t est conditions min. t yp. max. unit bv dsx drain C source breakdown voltage bv gss gate C source breakdown voltage v gs(off) gate C source cutCoff voltage v ds(sat) * drain C source saturation voltage i dsx drain C source cutCoff current yfs* forward transfer admittance 160 200 14 0.1 1.5 12 10 10 1.4 4 * pulse test: pulse width = 300 m s , duty cycle 2%. v gs = C10v buz900dp i d = 10ma buz901dp v ds = 0 i g = 100 m a v ds = 10v i d = 100ma v gd = 0 i d = 16a v ds = 160v buz900dp v gs = C10v v ds = 200v buz901dp v ds = 10v i d = 3a v v v v ma s characteristic t est conditions min. t yp. max. unit c iss input capacitance c oss output capacitance c rss reverse transfer capacitance t on turnCon time t off turn-off time 950 550 18 160 80 v ds = 10v f = 1mhz v ds = 20v i d = 7a pf ns st a tic chara cteristics (t case = 25c unless otherwise stated) d ynamic chara cteristics (t case = 25c unless otherwise stated) 50 100 150 200 250 300 0 0 25 50 75 100 125 150 t case temperature (?c) c c h a n n e l d i s s i p a t i o n ( w ) derating chart tec ma gna ma gnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 2/95 b uz900dp b uz901dp 1 2 3 4 5 6 7 8 9 0 2 4 6 8 10 12 14 16 v gate C source voltage (v) gs v d r a i n C s o u r c e v o l t a g e ( v ) d s t = 25?c c i = 9a d i = 5a d d i = 3a i = 14a d t = 25?c c t = 75?c c i d r a i n c u r r e n t ( a ) d v gate C source voltage (v) gs v = 10v ds 0 1 2 3 4 5 6 7 8 9 10 11 0 2 4 6 8 10 12 14 16 18 20 22 t = 100?c c 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 14 16 18 20 22 p = 2 5 0 w c h i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds 0 10 20 30 40 50 60 70 0 3v 1v 6v 5v 4v 7v t = 25?c c 2v typical transfer characteristics typical output characteristics 22 2 4 6 8 10 12 14 16 18 20 0 p = 2 5 0 w c h 0 10 20 30 40 50 60 70 i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds t = 75?c c 3v 2v 6v 5v 4v 7v 1v typical output characteristics drain C source voltage vs gate C source voltage 1 10 100 1000 0.1 1 10 100 i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds t = 25?c c 1 6 0 v 2 0 0 v buz900d buz901d d c o p e r a t i o n forward bias safe operating area 0 2 6 8 10 12 14 0.1 1 10 100 4 16 g t r a n s c o n d u c t a n c e ( s ) f s i drain current (a) d t = 25?c c t = 75?c c v = 20v ds transconductance |
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